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Silicon gap‐loaded microstrip slit‐tetragonal resonator under IR‐irradiation
Author(s) -
Zouganelis G.,
Budimir D.
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22240
Subject(s) - resonator , materials science , microstrip , microwave , optics , optoelectronics , silicon , tetragonal crystal system , transmission line , photoconductivity , slit , electrical engineering , engineering , physics , telecommunications , phase (matter) , quantum mechanics
Abstract A microstrip slit‐tetragonal resonator gap‐loaded with a piece of silicon is proposed as optical tuning element. Change of photoconductivity of silicon, after irradiation of it with an infrared lamp, results a significant change of density (∼25 dB) of the first resonant peak (n = 1/2) of resonator. This behavior makes this device a possible candidate for optical tuning of microwave transmission lines at specific operating frequency. Measured S‐parameters of the proposed device are in good agreement with simulated ones found from finite difference time domain method. Calculation of S‐parameters based on a transmission line model is included for comparison. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 699–702, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22240