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Rate‐equation‐based circuit model of high‐speed semiconductor lasers
Author(s) -
Zhang S. J.,
Zhu N. H.,
Pun E. Y. B.,
Chung P. S.
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22180
Subject(s) - intermodulation , microwave , rate equation , semiconductor , total harmonic distortion , laser , semiconductor laser theory , electrical impedance , electronic engineering , current (fluid) , voltage , distortion (music) , tone (literature) , harmonic , engineering , electrical engineering , physics , optics , acoustics , telecommunications , art , amplifier , literature , cmos , quantum mechanics , kinetics
Abstract Based on rate equations of semiconductor laser, a symbolically‐defined model for optical transmission system performance evaluation and network characterization in both time‐ and frequency‐domains is presented. The steady‐state and small‐signal characteristics, such as current–photon density curve, current–voltage curve, and input impedance, can be predicted from this model. Two important dynamic characteristics, second‐order harmonic distortion and two‐tone third‐order intermodulation products, are evaluated under different driving conditions. Experiments show that the simulated results agree well with the published data. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 539–542, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22180