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Negative‐resistance, reflection‐type bipolar frequency doubler
Author(s) -
Lau YeungFan,
Xue Quan,
Chan ChiHou,
Xia MingYao
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22173
Subject(s) - bipolar junction transistor , frequency multiplier , common emitter , electrical engineering , reflection (computer programming) , amplifier , microwave , optoelectronics , transistor , negative resistance , engineering , voltage doubler , electronic engineering , optics , materials science , physics , telecommunications , computer science , voltage , voltage source , cmos , dropout voltage , programming language
A new method is presented for frequency doubler design by operating bipolar transistor as negative‐resistance two‐terminal device. In the proposed design, frequency doubler's input and output ports (I/O) are both located in the base‐emitter side of bipolar transistor in a reflection manner. Whereas the conventional transmission‐type frequency doublers have their I/O connected to the base‐emitter and collector‐emitter ports, respectively. Resembling reflection‐type amplifier configuration, the new doubler features high reflection conversion gain (more than 3 dB) and low phase noise degradation (only 2.2 dB). © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 434–435, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22173