Negative‐resistance, reflection‐type bipolar frequency doubler | Zendy

Lau YeungFan | Zendy; Xue Quan | Zendy; Chan ChiHou | Zendy; Xia MingYao | Zendy

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Negative‐resistance, reflection‐type bipolar frequency doubler

Author(s) -

Lau YeungFan,

Xue Quan,

Chan ChiHou,

Xia MingYao

Publication year - 2007

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.22173

Subject(s) - bipolar junction transistor , frequency multiplier , common emitter , electrical engineering , reflection (computer programming) , amplifier , microwave , optoelectronics , transistor , negative resistance , engineering , voltage doubler , electronic engineering , optics , materials science , physics , telecommunications , computer science , voltage , voltage source , cmos , dropout voltage , programming language

A new method is presented for frequency doubler design by operating bipolar transistor as negative‐resistance two‐terminal device. In the proposed design, frequency doubler's input and output ports (I/O) are both located in the base‐emitter side of bipolar transistor in a reflection manner. Whereas the conventional transmission‐type frequency doublers have their I/O connected to the base‐emitter and collector‐emitter ports, respectively. Resembling reflection‐type amplifier configuration, the new doubler features high reflection conversion gain (more than 3 dB) and low phase noise degradation (only 2.2 dB). © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 434–435, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22173

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