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High linearity and high power added efficiency power amplifier by employing adaptive bias and PBG structure
Author(s) -
Cho Sunghee,
Seo Chulhun
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22158
Subject(s) - amplifier , rf power amplifier , power added efficiency , linear amplifier , intermodulation , direct coupled amplifier , electrical engineering , fet amplifier , harmonics , linearity , biasing , power (physics) , electronic engineering , dbc , materials science , engineering , optoelectronics , operational amplifier , voltage , physics , cmos , quantum mechanics
In this article, adaptive bias circuit and PBG structure have been employed to achieve high power added efficiency (PAE) and high third‐order intermodulation (IM3) suppression in power amplifier simultaneously. The dc bias voltage of the gate in FET has been controlled by envelope of the input signal. The PBG structure has been employed to suppress IM3 on the output port of the power amplifier. The PBG structure was optimized to suppress the second harmonics of the amplifier. IM3 and PAE of the proposed power amplifier using adaptive bias circuit and PBG structure has been improved by 2.73 dBc, and by 35.54%, respectively. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 443–446, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22158