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5.2 GHz high isolation SiGe BiCMOS CMFB Gilbert mixer
Author(s) -
Meng Chinchun,
Wu TzungHan,
Wu TseHung,
Huang GuoWei
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22152
Subject(s) - heterojunction bipolar transistor , frequency mixer , electrical engineering , microwave , pmos logic , port (circuit theory) , optoelectronics , micromixer , bicmos , materials science , engineering , amplifier , radio frequency , balun , cmos , telecommunications , transistor , bipolar junction transistor , antenna (radio) , nanotechnology , microfluidics , voltage
Active PMOS loads with common mode feedback to stabilize the bias points are employed in the Gilbert mixer loads to increase the mixer gain. Good device matching and the deep trench isolation technique in the SiGe HBT technology can improve the port‐to‐port isolations. A 16 dB conversion gain, IP 1dB = −21 dBm and IIP 3 = −11 dBm using 0.35 μm SiGe BiCMOS Gilbert downconversion micromixer is demonstrated when RF = 5.2 GHz and LO = 5.17 GHz with −66 dB LO‐IF, −52 dB LO‐RF, and −24 dB RF‐IF isolations. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 450–451, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22152