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Combined class F monolithic PA design
Author(s) -
Colantonio Paolo,
Giannini Franco,
Giofrè Rocco,
Limiti Ernesto
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22141
Subject(s) - amplifier , dbm , monolithic microwave integrated circuit , high electron mobility transistor , microwave , electrical engineering , bandwidth (computing) , power (physics) , engineering , electronic engineering , rf power amplifier , materials science , transistor , telecommunications , physics , quantum mechanics , voltage
Experimental results on two GaAs PHEMT MMIC Class F Power Amplifiers for X‐band applications are reported, aimed to validate a novel devices' combination method. In particular, 28.1 dBm output power with 44% power added efficiency and 30.6 dBm output power with 40% of power added efficiency were measured at 9.6 GHz, for single and combined devices amplifiers respectively. Both realised amplifiers exhibit 12% operating bandwidth. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 360–362, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22141