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A fully matched 9 W compact PHEMT MMIC high power amplifier for X‐band phase array radar applications
Author(s) -
Chu ChenKuo,
Huang HouKuei,
Liu HongZhi,
Chiu JuiChieh,
Lin CheHung,
Hsu ChuanChien,
Wu ChangLuen.,
Chang ChianSern,
Wang YeongHer
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22102
Subject(s) - high electron mobility transistor , amplifier , monolithic microwave integrated circuit , electrical engineering , microwave , rf power amplifier , power added efficiency , materials science , engineering , optoelectronics , electronic engineering , transistor , telecommunications , cmos , voltage
This paper presents a compact X‐band, 9 W AlGaAs/InGaAs/GaAs PHEMT MMIC high power amplifier. This amplifier is designed to fully match a 50 Ω input and output impedance. Based on 0.35 μm gate‐length power PHEMT technology, a two‐stage power amplifier is fabricated on a 3‐mil thick wafer. While operating under 9 V DC bias condition, the characteristics of 17 dB small‐signal gain, an average of 9 W continuous‐wave output power, and 34% power added efficiency from 9.0 to 10.5 GHz can be achieved. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 257–261, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22102