Low‐phase‐noise transformer‐based top‐series QVCO using GaInP/GaAs HBT technology | Zendy

Meng C. C. | Zendy; Tseng S. C. | Zendy; Chang Y. W. | Zendy; Su J. Y. | Zendy; Huang G. W. | Zendy

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Low‐phase‐noise transformer‐based top‐series QVCO using GaInP/GaAs HBT technology

Author(s) -

Meng C. C.,

Tseng S. C.,

Chang Y. W.,

Su J. Y.,

Huang G. W.

Publication year - 2007

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.22067

Subject(s) - heterojunction bipolar transistor , dbc , phase noise , electrical engineering , transformer , optoelectronics , microwave , materials science , figure of merit , transistor , bipolar junction transistor , voltage , engineering , telecommunications

The fully integrated GaInP/GaAs heterojunction bipolar transistor, transformer‐based top‐series quadrature voltage controlled oscillator (QVCO) is demonstrated at 4 GHz. The transformers on the semi‐insulating GaAs substrate possess good electrical properties at high frequencies. The QVCO at 4.1 GHz has phase noise of −120 dBc/Hz at 1 MHz offset frequency, output power of 2 dBm and the figure of merit −178 dBc/Hz. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 215–218, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22067

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