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Characteristics of low K thin film microstrip line on standard lossy silicon substrate for radio frequency integrated circuits
Author(s) -
Wu HungWei,
Weng MinHang,
Su YanKuin,
Yang RuYuan
Publication year - 2007
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.22042
Subject(s) - microstrip , materials science , wafer , polyimide , microwave , optoelectronics , substrate (aquarium) , dielectric , interconnection , attenuation , electronic engineering , silicon , radio frequency , electronic circuit , electrical engineering , optics , engineering , telecommunications , composite material , layer (electronics) , physics , oceanography , geology
In this paper, effective dielectric constant, line attenuation, and characteristic impedance of thin film microstrip line (TFML) on polyimide dielectric as interconnection for radio frequency integrated circuits is investigated. The TFML is fabricated on low cost low resistivity silicon substrate (ρ≤10 Ω cm) by incorporating a spin‐on dielectric polyimide and sputtering of aluminum. An accurate on‐wafer‐procedure for extracting the microwave characteristics of TFML up to 50 GHz is described and the method is successfully applied to low‐K polyimide deposited on the silicon. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 79–83, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22052