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A 80–100 GHz image‐reject passive‐HEMT mixer
Author(s) -
Archer John W.
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21953
Subject(s) - monolithic microwave integrated circuit , high electron mobility transistor , sideband , microwave , frequency mixer , gallium arsenide , radio frequency , electrical engineering , compatible sideband transmission , transceiver , intermediate frequency , optoelectronics , electronic mixer , integrated circuit , materials science , engineering , harmonic mixer , telecommunications , transistor , voltage , cmos , amplifier , local oscillator
This paper describes a single‐sideband, subharmonically pumped, passive‐HEMT integrated circuit mixer developed for use in transceivers for point‐to‐point telecommunications in the 83–87 GHz band. The gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) can readily be fabricated using a standard commercial process. The mixer performs equally well for either up‐ or down‐ conversion. For RF signals in the range 80–100 GHz, the conversion loss is typically 20 dB with LO drive in the range 40–50 GHz. Under these conditions, high rejection of the undesired sideband (>18 dB), relative to the desired signal, is achieved. For up‐conversion, 1 dB compression of the mixer gain typically occurs at −12 dBm RF output power. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 2429–2433, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21953