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High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate
Author(s) -
Werquin M.,
Ducatteau D.,
Vellas N.,
Delos E.,
Cordier Y.,
Aubry R.,
Gaquière C.
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21897
Subject(s) - materials science , microwave , optoelectronics , substrate (aquarium) , resistive touchscreen , atmospheric temperature range , silicon , microwave power , electrical engineering , engineering , telecommunications , physics , oceanography , meteorology , geology
DC‐ and RF‐pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the potential of this technology for power applications at microwave frequencies is confirmed. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 2301–2305, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21897