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Fully integrated 1.9‐GHz CMOS power amplifier for polar transmitter applications
Author(s) -
Park Changkun,
Kim Younsuk,
Kim Haksun,
Hong Songcheol
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21854
Subject(s) - electrical engineering , amplifier , rf power amplifier , cmos , transmitter , transformer , transistor , power bandwidth , linear amplifier , electronic engineering , direct coupled amplifier , engineering , balun , differential amplifier , voltage , physics , operational amplifier , channel (broadcasting) , antenna (radio)
A 1.9‐GHz CMOS differential power amplifier for polar transmitter applications was implemented with a 0.25 μm RF CMOS process. All of the matching components, input transformer, and output transformer are fully integrated with 50 Ω input and output matching. Each power transistor in each differential branch is split again and controlled separately to obtain a high power mode and a low power mode. The amplifier achieved a drain efficiency of 32% at the maximum output power of 29.5 dBm. The dynamic range is measured at approximately 27.5 dB with a supply voltage range of 0.7 ∼ 3.3 V. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 2053–2056, 2006; Published online in Wiley Inter‐Science (www.interscience.wiley.com). DOI 10.1002/mop.21854
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