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A high efficiency class‐F power amplifier using AIGaN/GaN HEMT
Author(s) -
Ko Sangwon,
Wu Wenhsing,
Lin Jenshan,
Jang Soohwan,
Ren Fan,
Pearton Stephen,
Fitch Robert,
Gillespie James
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21832
Subject(s) - high electron mobility transistor , amplifier , materials science , transistor , microwave , optoelectronics , electrical engineering , power (physics) , microstrip , gallium nitride , dbm , load pull , rf power amplifier , physics , engineering , telecommunications , cmos , nanotechnology , quantum mechanics , voltage , layer (electronics)
This paper reports the development of a high efficiency and compact power amplifier using an AlGaN/GaN high electron mobility transistor (HEMT). The class‐F load network in microstrip topology was applied to a 0.75‐μm gate length and 300‐μm gate width AlGaN/GaN HEMT. The 1 dB compression point of the output power was 24 dBm at 900 MHz. The peak power added efficiency of 38% was optimized at output power of 24.5 dBm, which is almost the same as the 1 dB compression point. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1955–1957, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21832
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