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An on‐chip low loss 1:9 transmission line transformer and its model
Author(s) -
Lee Dong Ho,
Baek Donghyun,
Kim Haksun,
Hong Songcheol
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21820
Subject(s) - transformer , microstrip , microwave , electrical engineering , transmission line , heterojunction bipolar transistor , insertion loss , electric power transmission , chip , engineering , electronic engineering , materials science , optoelectronics , voltage , telecommunications , transistor , bipolar junction transistor
An on‐chip implementation of a low loss 1:9 transmission line transformer (TLT) is presented. The TLT was fabricated with broadside coupled microstrip lines in a GaAs HBT process. The wide metal transmission lines allow the high‐quality factor and the high‐current capability. The measured insertion loss is 0.88 dB at 880 MHz. The equivalent circuit model of the TLT is also presented. The model shows good agreement with the measured data. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1936–1940, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21820