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DC or pulse I(V) measurements to simulate transmission line class E power amplifiers
Author(s) -
LooYau J. R.,
AscencioRamírez Hugo,
ReynosoHernández J. A.
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21794
Subject(s) - amplifier , transmission line , microwave , dispersion (optics) , nonlinear system , power (physics) , electric power transmission , electronic engineering , line (geometry) , electrical engineering , transmission (telecommunications) , physics , engineering , optics , telecommunications , mathematics , geometry , cmos , quantum mechanics
In FET I(V) nonlinear modeling, the I(V) experimental data are important because they allow one to determine the initial values of the empirical nonlinear model. Pulsed I(V) are preferred over DC measurements because of dispersion phenomena. However, the simulation of a class E PA using I(V) empirical nonlinear model constructed from DC or pulsed measurements to predicts values of PAE, gain, and efficiency are similar. Although this fact can be predictable or evident, because the transistor works in the region where heating and dispersion effects are small, this has not been experimentally demonstrated yet. Therefore the main purpose of this work is to determine whether pulse or DC I(V) measurements are suitable to develop the nonlinear model in order to predict the main features of a transmission line class E PA as P out , drain efficiency, and PAE. The simulations using both types of data were compared with two experimental transmission line class E PA, designed at 0.8 and 1.9 GHz. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48:1886–1890, 2006; Published online in Wiley InterScience (www.interscience.wiley.com(. DOI 10.1002/mop.21794