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Loss characteristics of silicon substrate with different resistivities
Author(s) -
Yang RuYuan,
Hung ChengYuan,
Su YanKuin,
Weng MinHang,
Wu HungWei
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21786
Subject(s) - substrate (aquarium) , silicon , materials science , dielectric loss , microwave , leakage (economics) , optoelectronics , dielectric , conductivity , electrical engineering , electronic engineering , chemistry , telecommunications , engineering , oceanography , economics , macroeconomics , geology
Abstract In the design of high‐speed and high frequency IC's, the influence of the substrate on the circuit performance must be considered carefully. This work investigates the loss characteristic of silicon substrate with different resistivities and distinguishes theoretically and experimentally the dielectric losses into the intrinsic loss of silicon (tan δ D ) and the extrinsic substrate leakage loss (tan δ L ) caused by the finite conductivity of the substrate. The dielectric relaxation (cut off) frequency as a function of silicon substrate resistivity are calculated as considering the conditions of substrate noise isolation and RF passive device design. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1773–1776, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21786