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Performance degradation of some on‐chip finite‐ground coplanar waveguide (FGCPW)‐built passive devices at high temperature
Author(s) -
Yin WenYan,
Mao JunFa,
Shi JingLin,
Sun XiaoWei
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21751
Subject(s) - materials science , coplanar waveguide , inductor , electrical conductor , optoelectronics , microwave , equivalent series resistance , temperature coefficient , ground plane , stripline , monolithic microwave integrated circuit , attenuation , electrical engineering , composite material , optics , engineering , physics , voltage , telecommunications , amplifier , cmos , antenna (radio)
At different temperatures, the performance degradation of on‐chip finite‐ground coplanar waveguides (FGCPWs) and FGCPW‐built meander‐line inductors are investigated in this article. These passive devices were all fabricated on a double‐layer polyimide and GaAs substrates and often used in monolithic microwave integrated circuits. It is shown that the increase in temperature causes the increase in series resistance or conductive loss of the metallization planes, and the temperature coefficient of series resistance depends on both frequency and metallization thickness. At given metal plane thickness and operating frequency, the conductive attenuation constant increases linearly with increasing temperature. Because of the increase in conductive loss, the maximum of Q‐factor of each meander‐line inductor decreases linearly with increasing temperature. While the temperature effect on the parasitic coupling between two parallel FGCPW stubs or between two neighboring inductors can be neglected, even the temperature reaches 438 K. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1754–1759, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21751