5.2‐GHz GaInP/GaAs HBT cascode LNA with 5.5 dB gain enhancement using inter‐stage LC matching | Zendy

Meng C. C. | Zendy; Jhong J. C. | Zendy

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5.2‐GHz GaInP/GaAs HBT cascode LNA with 5.5 dB gain enhancement using inter‐stage LC matching

Author(s) -

Meng C. C.,

Jhong J. C.

Publication year - 2006

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.21742

Subject(s) - cascode , noise figure , heterojunction bipolar transistor , inductor , electrical engineering , common emitter , materials science , optoelectronics , low noise amplifier , amplifier , power gain , electronic engineering , voltage , cmos , engineering , transistor , bipolar junction transistor

A gain boosting method without noise‐figure degradation by optimizing interstage matching in a cascode low‐noise amplifier (LNA) with emitter‐degeneration inductor is demonstrated at 5.2 GHz using 2‐μm GaInP/GaAs HBT technology. A low‐pass LC matching network is inserted in the interstage of a conventional cascode LNA with emitter‐degeneration‐inductor to enhance the gain with the same current consumption. The 2‐μm GaInP/GaAs HBT LNA without interstage matching has 14‐dB power gain and 2.37‐dB noise figure at 5.2 GHz while the 2‐μm GaInP/GaAs HBT LNA with interstage matching has 19.5‐dB power gain and 2.22‐dB noise figure at 5.2 GHz. The current consumption is 2.3 mA and voltage supply is 3.6 V. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1499–1501, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21741

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