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Impact of the positive and negative optical response of field‐effect transistors on the frequency of optically controlled microwave oscillators
Author(s) -
TamayoRivera L.,
HirataFlores F. I.,
ReynosoHernández J. A.,
RangelRojo R.
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21701
Subject(s) - microwave , transistor , field effect transistor , optoelectronics , field (mathematics) , physics , wavelength , optics , materials science , quantum mechanics , voltage , mathematics , pure mathematics
In this paper, we present an optically controlled microwave oscillator design based on a field‐effect transistor. Positive and negative optical responses in the transistor were observed depending on the irradiation wavelength of the optical beam. We find that the positive optical response shifts down the fundamental frequency, while the negative optical response shifts it up. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1558–1561, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21701