A novel diode linearizer for SiGe HBT power amplifier | Zendy

Liu Haiwen | Zendy; Yoshimasu Toshihiko | Zendy; Kurachi Satoshi | Zendy; Ito Nobuyuki | Zendy; Yonemura Koji | Zendy

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A novel diode linearizer for SiGe HBT power amplifier

Author(s) -

Liu Haiwen,

Yoshimasu Toshihiko,

Kurachi Satoshi,

Ito Nobuyuki,

Yonemura Koji

Publication year - 2006

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.21681

Subject(s) - linearizer , heterojunction bipolar transistor , amplifier , electrical engineering , dbm , diode , gain compression , power (physics) , engineering , optoelectronics , voltage , microwave , materials science , physics , telecommunications , predistortion , transistor , bipolar junction transistor , cmos , quantum mechanics

In this paper, a novel diode linearizer to keep the base voltage of SiGe HBT power amplifier (PA) constant in the large‐signal region is introduced. The results show that the output P 1dB , and power‐added efficiency (PAE) are improved by 4.9 dBm and 22.8%, respectively. At an input power of 20 dBm, the gain compression and phase distortion of the linearized PA is 2.1 dB and 1.1°, respectively, compared with 5.0 dB and 20.4° for the conventional PA. Also, the improved ACPR is given.© 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1535–1537, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21681

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