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A novel diode linearizer for SiGe HBT power amplifier
Author(s) -
Liu Haiwen,
Yoshimasu Toshihiko,
Kurachi Satoshi,
Ito Nobuyuki,
Yonemura Koji
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21681
Subject(s) - linearizer , heterojunction bipolar transistor , amplifier , electrical engineering , dbm , diode , gain compression , power (physics) , engineering , optoelectronics , voltage , microwave , materials science , physics , telecommunications , predistortion , transistor , bipolar junction transistor , cmos , quantum mechanics
In this paper, a novel diode linearizer to keep the base voltage of SiGe HBT power amplifier (PA) constant in the large‐signal region is introduced. The results show that the output P 1dB , and power‐added efficiency (PAE) are improved by 4.9 dBm and 22.8%, respectively. At an input power of 20 dBm, the gain compression and phase distortion of the linearized PA is 2.1 dB and 1.1°, respectively, compared with 5.0 dB and 20.4° for the conventional PA. Also, the improved ACPR is given.© 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1535–1537, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21681