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Modeling the I‐V characteristics of the power microwave FETs with the Angelov model using pulse measurements
Author(s) -
LooYau J. R.,
ReynosoHernández J. A.,
Zuñiga J. E.,
HirataFlores F. I.,
AscencioRamírez Hugo
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21596
Subject(s) - microwave , pulse (music) , power (physics) , electronic engineering , simple (philosophy) , materials science , nonlinear system , optoelectronics , electrical engineering , engineering , computer science , physics , telecommunications , philosophy , epistemology , quantum mechanics , detector
In this paper, a simple and effective method of extracting the values of the parameters of the Angelov nonlinear I(V) model of GaAs HJ‐FETs is presented. In the proposed method, the coefficients of the function ψ are determined from I(V) pulse measurements, using the least‐squares optimization method. The utility of the proposed method is demonstrated by modeling the I(V) characteristic of the different families of packaged medium‐power GaAs HJ‐FETs designed for mobile communications. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1046–1050, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21596