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A 3.5‐GHz low‐noise amplifier for first‐generation ultra‐wideband radio
Author(s) -
Yang Li,
Liao Huailin,
Zhang Guoyan,
Huang Ru,
Zhang Xing
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21554
Subject(s) - electrical engineering , wideband , low noise amplifier , microwave , noise figure , amplifier , bandwidth (computing) , engineering , ultra wideband , bicmos , broadband , electronic engineering , optoelectronics , physics , telecommunications , cmos , voltage , transistor
We present a fully integrated low‐frequency (3.1–5‐GHz) ultra‐wideband (UWB) low‐noise amplifier (LNA) which implemented with a Jazz 0.35‐μm SiGe BiCMOS (peak f T 60 GHz) process. The combination of common base and resistive shunt‐feedback stages was adopted as the main structure of the designed LNA. The measured maximum gain is 15.7 dB at 3.5 GHz with 0.6‐dB gain flatness over the whole operating bandwidth. And the minimum NF 3.8 dB is achieved at 4 GHz. The whole circuit including the bias circuit network consumes 7 mA with 3‐V supply and only occupies 0.65 × 0.9 mm. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1119–1123, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21554