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Capacitance characterization of multipath interconnects for nanotechnology circuits
Author(s) -
Goel A. K.,
Eady N. R.
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21495
Subject(s) - capacitance , interconnection , microwave , multipath propagation , electronic circuit , materials science , electronic engineering , electrical engineering , optoelectronics , substrate (aquarium) , nanoscopic scale , characterization (materials science) , engineering , nanotechnology , telecommunications , physics , electrode , channel (broadcasting) , oceanography , quantum mechanics , geology
A multipath interconnect carries a signal on an electrical circuit by using the concept of parallel processing, that is, by providing two or more paths between the driver and the load. These paths are stacked vertically and isolated from one another by insulating layers between them. In this paper, we have used the Green's function method to determine the parasitic capacitances associated with a system of nanoscale multipath interconnects fabricated on a silicon‐based substrate. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 848–852, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21495