Highly efficient LDMOS power amplifier based on class‐E topology | Zendy

Lee Jongwoo | Zendy; Kim Sungwoo | Zendy; Nam Jungjin | Zendy; Kim Jangheon | Zendy; Kim Ildu | Zendy; Kim Bumman | Zendy

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Highly efficient LDMOS power amplifier based on class‐E topology

Author(s) -

Lee Jongwoo,

Kim Sungwoo,

Nam Jungjin,

Kim Jangheon,

Kim Ildu,

Kim Bumman

Publication year - 2006

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.21476

Subject(s) - ldmos , amplifier , electrical engineering , power added efficiency , rf power amplifier , power (physics) , microwave , dbm , transistor , engineering , electronic engineering , topology (electrical circuits) , telecommunications , physics , cmos , voltage , quantum mechanics

This paper describes a highly efficient class‐E power amplifier. The design has been carried out at 1 GHz using a LDMOS transistor with 10 W of peak envelope power (PEP). Drain efficiency of 76.1%, power‐added efficiency (PAE) of 73.6%, and gain of 14.8 dB are achieved at an output power of 39.1 dBm for a continuous wave (CW) signal. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 783–789, 2006; Pubished online in Wiley InterScience (www.interscience.wiley.com) DOI 10.1002/mop.21476

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