A modified HICUM model for GaInP/GaAs HBT devices | Zendy

Tseng S.C. | Zendy; Meng C. C. | Zendy; Chen W.Y. | Zendy; Su J.Y. | Zendy

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A modified HICUM model for GaInP/GaAs HBT devices

Author(s) -

Tseng S.C.,

Meng C. C.,

Chen W.Y.,

Su J.Y.

Publication year - 2006

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.21474

Subject(s) - heterojunction bipolar transistor , microwave , optoelectronics , transit time , transit (satellite) , materials science , electrical engineering , physics , engineering , telecommunications , transistor , voltage , bipolar junction transistor , transport engineering , public transport

A compact physics‐based transit‐time model is established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit‐time frequency versus bias ( I C , V CE ), especially at low‐ and medium‐current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit‐time frequency versus bias ( I C , V CE ) more precisely. This model has obvious advantages over the VBIC model for showing the relation of f t versus bias ( I C , V CE ) in the low and medium current regimes for GaInP/GaAs HBT devices. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 780–783, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21474

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