Premium
A modified HICUM model for GaInP/GaAs HBT devices
Author(s) -
Tseng S.C.,
Meng C. C.,
Chen W.Y.,
Su J.Y.
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21474
Subject(s) - heterojunction bipolar transistor , microwave , optoelectronics , transit time , transit (satellite) , materials science , electrical engineering , physics , engineering , telecommunications , transistor , voltage , bipolar junction transistor , transport engineering , public transport
A compact physics‐based transit‐time model is established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit‐time frequency versus bias ( I C , V CE ), especially at low‐ and medium‐current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit‐time frequency versus bias ( I C , V CE ) more precisely. This model has obvious advantages over the VBIC model for showing the relation of f t versus bias ( I C , V CE ) in the low and medium current regimes for GaInP/GaAs HBT devices. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 780–783, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21474