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Frequency‐response simulation analysis of InGaAs/InP SAM‐APD devices
Author(s) -
Pereira Jorge Manuel Torres
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21452
Subject(s) - avalanche photodiode , absorption (acoustics) , optoelectronics , microwave , materials science , wavelength , multiplication (music) , layer (electronics) , optics , telecommunications , physics , nanotechnology , computer science , detector , acoustics
Abstract The frequency response of separate absorption multiplication avalanche photodiodes is investigated with regard to the effect of the absorption‐ and multiplication‐layer widths, the wavelength of the light, and the direction from which the light is injected into the absorption region. The results apply to multilayer structures with an absorption layer of In 0.53 Ga 0.47 As and an avalanche layer of InP. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 712–717, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21452.