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Low‐power PHEMT MMIC LNA for C‐band applications
Author(s) -
Yuk Jong Seol,
Choi Byoung Gun,
Lee You Sang,
Park Chul Soon,
Kang Sukhoon
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21320
Subject(s) - monolithic microwave integrated circuit , high electron mobility transistor , electrical engineering , microwave , noise figure , engineering , power (physics) , electronic engineering , telecommunications , transistor , physics , voltage , cmos , amplifier , quantum mechanics
We report on design and performance of a low‐power‐consuming two‐stage MMIC LNA using AlGaAs/GaAs pseudomorphic HEMTs with 0.25‐μm T‐gates. The MMIC LNA showing a noise figure of 2.55 dB with 17‐dB associated gain at 5.8 GHz consumes only 18 mW, which is the lowest value of power consumption ever reported to date from PHEMT MMIC LNAs around this frequency range, and is attributed to the optimization of the gate width and current, as well as the use of a circuit with a single current path. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48:253–255, 2006; Published Online in Wiley InterScience (www.interscience.wiley.com) DOI 10.1002/mop.21320