Premium
A concurrent multiband InGaP‐GaAs HBT LNA for 1.8/1.9‐GHz GSM, 2.4/4.9/5.2/5.7‐GHz WLAN, and 5–7‐GHz ultra‐wideband (UWB) system applications
Author(s) -
Lin YoSheng,
Liao KunNan
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21279
Subject(s) - return loss , gsm , electrical engineering , wideband , amplifier , heterojunction bipolar transistor , noise figure , low noise amplifier , materials science , optoelectronics , shunt (medical) , physics , transistor , telecommunications , engineering , antenna (radio) , cmos , voltage , bipolar junction transistor , medicine , cardiology
A temperature‐insensitive (−25°C–175°C) monolithic concurrent multiband low‐noise amplifier (LNA) for 1.8/1.9‐GHz GSM, 2.4/4.9/5.2/5.7‐GHz WLAN, and 5–7‐GHz ultra‐wideband (UWB) system applications is realized using a low‐cost 2‐μm InGaP‐GaAs HBT technology. The first stage of the LNA provides high gain and input matching simultaneously at the 1.8/1.9‐GHz GSM, 2.4/4.9/5.2/5.7‐GHz WLAN, and 5–7‐GHz UWB bands. The output matching of the second stage was realized by using shunt‐shunt feedback. It consumes only 9‐mW power and achieves transducer gains ( S 21 ) of 27.2, 27.1, 24.9, 16.2, 16.0, 15.2, and 11.5 dB; reverse isolation ( S 21 ) of −46.4, −47.4, −47.4, −45.2, −44.6, −43.1, and −43.4 dB; input return losses ( S 11 ) of −13, −14.8, −22.8, −10, −17, −27.7, and −10 dB, output return losses ( S 22 ) of −11.4, −11.5, −14.2, −17.6, −17.3, −19.4, and −19.4 dB, and noise figures of 1.99, 2.06, 3.06, 3.22, 2.8, 2.22, and 2.33 dB at 1.8, 1.9, 2.4, 4.9, 5.2, 5.7, and 7.0 GHz, respectively. To our knowledge, the noise figures (2.22 dB at 5.7 GHz and 2.33 dB at 7 GHz) are state‐of‐the‐art results among all C‐band bipolar LNAs with a fully on‐chip input matching network. The LNA only occupies an area of 650 × 300 μm, excluding the test pads because only two inductors are used. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 110–114, 2006; Published online in Wiley InterScience (www.interscience.wiley.com.) DOI 10.1002/mop.21279