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LDMOS RF power amplifiers with improved performance characteristics using defected ground structure
Author(s) -
Koulouzis H.,
Budimir D.
Publication year - 2006
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21257
Subject(s) - ldmos , intermodulation , amplifier , rf power amplifier , harmonics , electrical engineering , engineering , electronic engineering , power (physics) , harmonic , radio frequency , microwave , telecommunications , physics , transistor , voltage , acoustics , cmos , quantum mechanics
An LDMOS RF power amplifier with improved performance characteristics such as intermodulation distortion (IMD) and power‐added efficiency (PAE) using a defected ground structure (DGS) matching circuit and bias lines is presented. The injection of the fundamental‐signal 2 nd harmonics in the amplifier together with the two fundamental signals will produce additional IM products at the output. By proper selection of phase and amplitude of the injected second harmonic signals, it is possible to improve the IMD performance. The resultant PAE of power amplifier with DGS matching circuit and bias lines is improved by up to 6%. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 50–53, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21257