Parameter extraction of InGaP/GaAs HBT nonlinear current characteristics for Volterra series analysis | Zendy

Huang ChienChang | Zendy; Chen KuanYu | Zendy

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Parameter extraction of InGaP/GaAs HBT nonlinear current characteristics for Volterra series analysis

Author(s) -

Huang ChienChang,

Chen KuanYu

Publication year - 2005

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.21167

Subject(s) - heterojunction bipolar transistor , intermodulation , volterra series , nonlinear system , bipolar junction transistor , optoelectronics , heterojunction , materials science , microwave , electronic engineering , electrical engineering , harmonic , transistor , engineering , physics , amplifier , voltage , acoustics , telecommunications , cmos , quantum mechanics

In this paper, the base/collector current characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) for Volterra analysis are extracted using the low‐frequency harmonic‐power measurements with the associated phase‐polarity information. The determining equations are derived via a systematic approach in order to acquire the general expressions to any nonlinear orders. The simulations and experiments of two‐tone intermodulation distortions for an HBT device verify the extracted results. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 47: 349–353, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21167

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