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Variable inductance planar spiral inductors and CMOS wideband amplifiers with inductive peaking
Author(s) -
Lin YoSheng,
Chen JiaLun,
Chen KeHou
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21153
Subject(s) - wideband , inductor , cmos , inductance , electrical engineering , amplifier , bandwidth (computing) , electronic engineering , phase noise , engineering , cascode , voltage , telecommunications
In this paper, a complete set of variable inductance (VI) planar spiral inductors with MOSFET switches are characterized and modeled for the first time. These VI inductors can be used to optimize the performances of CMOS wideband low‐noise amplifiers (LNAs) with inductive peaking, to implement low‐phase noise voltage‐controlled oscillators (VCOs), and so on. Moreover, the experimental results show that series‐inductive peaking can effectively improve the bandwidth of the CMOS wideband LNAs. For a CMOS wideband LNA with a 0.58‐nH peaking inductor, a 74.2% (from 3.1 to 5.4 GHz) increase in bandwidth is achieved. The measured noise figures (NFs) are 2.2 dB at 1 GHz and 4.0 dB at 6 GHz. The measured input 3 rd ‐order intercepting point (IIP3) is −3 dBm at 3 GHz. These results show that the performances of CMOS wideband LNAs can be improved by inductive peaking, which can be optimized by our developed VI inductors. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 47: 305–309, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21153