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Experimental study of bent SiC optical waveguides
Author(s) -
Pandraud G.,
French P. J.,
Sarro P. M.
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21128
Subject(s) - bent molecular geometry , silicon carbide , microwave , bending , plasma enhanced chemical vapor deposition , materials science , wavelength , optics , optoelectronics , silicon , engineering , physics , telecommunications , composite material
Bending losses of curved plasma‐enhanced chemical Vapour (PECVD) Silicon Carbide (SiC) waveguides are studied experimentally. We show that properly designed curved sections generate less 0.5 dB/rad for both TE and TM polarisations. We also investigate the wavelength dependency and show that the bending losses decrease with wavelength in the visible range. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 47: 219–220, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21128