Power‐amplifier design using negative‐image device models

A novel design methodology for wireless power amplifiers is presented using negative‐image device models that are applicable to GaAs FETs and other power devices. Negative‐image device models of a power device are generated by incorporating hypothetical negative‐image matching networks and a load‐line theory with optimization technique. The negative‐image device‐modeling methodology provides the following advantages in comparison to previously developed techniques: (i) it can predict achievable amplifier performance in the device‐modeling stage; (ii) it provides an accurate starting point for the synthesis of impedance‐matching networks; (iii) it can make use of widely available linear simulators. Descriptions of the negative‐image device‐modeling method and its application to the design of a high‐power GaAs FET amplifier are presented. The experimental results of an implemented amplifier are given as a demonstration of the effectiveness of the proposed design methodology. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 47: 197–201, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21122