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Evaluation of scattering parameters, gain, and feedback‐capacitance‐dependent noise performance of a pseudomorphic high‐electron‐mobility transistor
Author(s) -
Guru Vandana,
Vyas H. P.,
Gupta Mridula,
Gupta R. S.
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21079
Subject(s) - high electron mobility transistor , capacitance , scattering , transistor , microwave , scattering parameters , noise (video) , optoelectronics , materials science , noise figure , electron mobility , electrical engineering , condensed matter physics , physics , engineering , electrode , optics , computer science , cmos , amplifier , quantum mechanics , image (mathematics) , voltage , artificial intelligence
Abstract This paper evaluates microwave performance in terms of scattering parameters and gains and presents the effect of gate‐to‐drain capacitance C gd on the noise behavior of a pseudomorphic high‐electron mobility transistor (PHEMT). An analytical expression for C gd is obtained and the influence of gate length, epilayer thickness, and gate and drain bias upon this PHEMT is studied. Analytically calculated small‐signal parameters are used to evaluate the intrinsic and extrinsic scattering parameters and gains of the PHEMT. Finally, the dependence of bias and frequency on minimum noise figure, scattering parameters, and gains is studied. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 47: 51–57, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21079