2‐GHz quasi‐balanced‐mode GaAs FET amplifier | Zendy

Yu Chi Sun | Zendy; Chan Wing Shing | Zendy; Li Chung Wai | Zendy; Lo Wai Keung | Zendy; Chan Shiu Hei | Zendy

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2‐GHz quasi‐balanced‐mode GaAs FET amplifier

Author(s) -

Yu Chi Sun,

Chan Wing Shing,

Li Chung Wai,

Lo Wai Keung,

Chan Shiu Hei

Publication year - 2005

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.21055

Subject(s) - varicap , optoelectronics , fet amplifier , microwave , electrical engineering , amplifier , diode , capacitance , materials science , engineering , electronic engineering , physics , cmos , operational amplifier , telecommunications , electrode , quantum mechanics

In this paper, a Quasi‐Balanced mode GaAs FET amplifier is proposed, where a varactor diode is connected in parallel with the gate source of a GaAs FET, forcing it to operate in a quasi‐balanced mode in order to compensate its input nonlinear gate‐source capacitance. A 30‐dB reduction for the first side‐lobe was obtained at 1‐dB g.c.p. by using optimal 2 nd ‐harmonic terminations and a varactor diode. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 573–577, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21055

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