Premium
2‐GHz quasi‐balanced‐mode GaAs FET amplifier
Author(s) -
Yu Chi Sun,
Chan Wing Shing,
Li Chung Wai,
Lo Wai Keung,
Chan Shiu Hei
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21055
Subject(s) - varicap , optoelectronics , fet amplifier , microwave , electrical engineering , amplifier , diode , capacitance , materials science , engineering , electronic engineering , physics , cmos , operational amplifier , telecommunications , electrode , quantum mechanics
In this paper, a Quasi‐Balanced mode GaAs FET amplifier is proposed, where a varactor diode is connected in parallel with the gate source of a GaAs FET, forcing it to operate in a quasi‐balanced mode in order to compensate its input nonlinear gate‐source capacitance. A 30‐dB reduction for the first side‐lobe was obtained at 1‐dB g.c.p. by using optimal 2 nd ‐harmonic terminations and a varactor diode. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 573–577, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21055