Premium
Microwave performance of MCM‐D embedded capacitors with interconnects
Author(s) -
Post John E.
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.21025
Subject(s) - capacitor , microwave , interconnection , inductance , materials science , optoelectronics , electrical engineering , equivalent series resistance , q factor , filter capacitor , electronic engineering , engineering , telecommunications , voltage , resonator
This paper discusses the microwave performance of 1.5–81‐pF embedded capacitors constructed by placing a 175‐nm‐thick anodized layer between the 2‐μm‐thick ground and power planes in a silicon multichip‐module‐deposited (MCM‐D) process. Analysis of an equivalent‐circuit model shows that the intrinsic quality factor of these embedded capacitors is approximately 176 and that the overall quality factor is limited primarily by the resistance and inductance of the associated interconnect. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 487–492, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21025