Premium
A high‐linearity micromixer for 5‐GHz‐band WLAN applications using 0.35‐μm SiGe BiCMOS technology
Author(s) -
Lin YoSheng,
Chen ChiChen
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20863
Subject(s) - linearity , micromixer , electrical engineering , microwave , bicmos , engineering , radio frequency , electronic engineering , materials science , optoelectronics , voltage , transistor , telecommunications , microfluidics , nanotechnology
In this paper, a down‐conversion double‐balanced micromixer with very good linearity for 5‐GHz‐band WLAN applications using 0.35‐μm SiGe BiCMOS technology is presented. Good conversion gain of 7.3 dB, LO‐RF isolation of 50 dB, LO‐IF isolation of 45 dB, and RF‐IF isolation of 28.5 dB are achieved at measurement condition of RF frequency of 5.2 GHz, LO frequency of 4.9 GHz, IF frequency of 0.3 GHz, and supply voltage of 3 V. In addition, very good linearity performances, that is, an input 1‐dB compression point (P 1dB ) greater than 0 dBm, and an input 3 rd ‐order intercept point (IIP3) of 0.5 dBm were also achieved. The single‐to‐differential input stages in the RF and LO ports eliminate the need for common‐mode rejection. The micromixer consumes 15.6‐mW power and occupies an area of only 660 × 420 μm, excluding the test pads. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 499–502, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20863