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A compact composite transistor as a novel RF power cell for high‐linearity power amplifiers
Author(s) -
Gao Huai,
Zhang Haitao,
Guan Huinan,
Yang LiWu,
Li G. P.
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20859
Subject(s) - amplifier , transistor array , transistor , predistortion , linearity , rf power amplifier , electrical engineering , multiple emitter transistor , power semiconductor device , power (physics) , transistor model , electronic engineering , engineering , field effect transistor , cmos , physics , voltage , quantum mechanics
A novel composite transistor consisting of an inverted transistor parallel‐connected to a standard RF power transistor is implemented to improve the linearity of the power amplifier. The inverted transistor facilitates the predistortion and feedback functions. The P 1dB output power and IP 3 of the composite transistor PA are increased by 5 and 7 dB, respectively. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 483–485, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20859
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