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A 5.2‐GHz low‐power low‐noise amplifier using inGaP‐GaAs HBT technology
Author(s) -
Tai ChiaLiang,
Lu SheyShi,
Lin YoSheng
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20843
Subject(s) - cascode , heterojunction bipolar transistor , electrical engineering , amplifier , noise figure , low noise amplifier , engineering , monolithic microwave integrated circuit , microwave , return loss , optoelectronics , materials science , electronic engineering , bipolar junction transistor , voltage , transistor , telecommunications , cmos , antenna (radio)
A 5.2‐GHz monolithic low‐power low‐noise amplifier (LNA) with a quasi‐cascode configuration using InGaP‐GaAs HBT technology is reported for the first time. A state‐of‐the‐art noise figure of 2.39 dB at 5.2 GHz is obtained among all bipolar LNAs with a fully on‐chip input‐matching network. The input return loss is −32 dB with a voltage gain of 27 dB at 5.2 GHz. An input 1‐dB compression point (P 1dB ) and an input 3 rd ‐order intercept point (IIP3) of −14 and −5 dBm are also achieved, respectively. This circuit consumes only small dc power of 6 mW. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 425–427, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20843
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