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Study of microstrip mode in RF on‐wafer probes
Author(s) -
Safwat Amr M. E.
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20812
Subject(s) - microstrip , wafer , microwave , mode (computer interface) , conductor , reflection (computer programming) , electronic engineering , reflection coefficient , engineering , materials science , port (circuit theory) , optoelectronics , electrical engineering , optics , physics , telecommunications , computer science , composite material , programming language , operating system
An RF on‐wafer probe is simulated using commercial 3D simulation software. The two‐port simulated S ‐parameters are found to be in a good agreement with the experimental data. The model is extended to study the microstrip‐mode effects in a typical RF on‐wafer probe. The microstrip mode is studied as the mode between the probe coax outer conductor and the wafer chuck. The microstrip‐mode reflection coefficient looking into the probe tips is determined for the first time. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 324–328, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20812