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Characteristic parameters for CPWs on a very thin dielectric layer
Author(s) -
Zhao JiXiang
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20783
Subject(s) - capacitance , conformal map , dielectric , substrate (aquarium) , microwave , materials science , layer (electronics) , thin film , thin layer , electronic engineering , optoelectronics , electrode , computer science , composite material , mathematics , engineering , physics , nanotechnology , mathematical analysis , telecommunications , geology , oceanography , quantum mechanics
In this paper, approximate analytical expressions for characteristic parameters of CPWs on a very thin dielectric layer are given. The “crowding phenomenon” that occurs during the process of conformal mapping is overcome. Combining these expressions with the partial‐capacitance method, the characteristic parameters for CPWs on a multidielectric layered substrate are computed and are found to agree well with the test data. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 240–241, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20783