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RF equivalent‐circuit model of interconnect bends based on S ‐parameter measurements
Author(s) -
Shi Xiaomeng,
Ma Jianguo,
Ong Beng Hwee,
Yeo Kiat Seng,
Do Manh Anh,
Li Erping
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20760
Subject(s) - interconnection , microwave , cmos , wafer , electronic engineering , engineering , electrical engineering , substrate (aquarium) , scattering parameters , lossy compression , materials science , optoelectronics , computer science , telecommunications , oceanography , artificial intelligence , geology
A modified model for RF interconnect bends on lossy substrate in CMOS technology is presented. The model parameters are extracted directly from the on‐wafer S‐parameter measurements. The accuracy is verified up to 20 GHz by the measurements of the test structures. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 170–173, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20760