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BST interdigital capacitors with high tunability on MgO substrate
Author(s) -
Kim KiByoung,
Yun TaeSoon,
Kim RanYoung,
Kim HyunSuk,
Kim HoGi,
Lee JongChul
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20709
Subject(s) - capacitor , materials science , thin film , substrate (aquarium) , doping , dissipation factor , ferroelectricity , optoelectronics , microwave , film capacitor , electrical engineering , voltage , dielectric , nanotechnology , telecommunications , computer science , oceanography , engineering , geology
In this paper, Au/Ba 0.6 Sr 0.4 TiO 3 (BST) ferroelectric thin‐film interdigital capacitors on MgO substrate are presented. The interdigital capacitors with a 50‐μm gap and different doped materials of BST thin film are characterized. Tunability rates of 11.2% and 28% are obtained for the undoped BST thin film and the Mn‐doped (3 mol %) BST thin film, respectively, at 3.5 GHz with a bias voltage of 20 V. Furthermore, the loss tangent of the BST thin film is found to be approximately 0.0158 and it decreases with Mn doping. Mn‐doped (3 mol %) BST film is suggested to be an effective candidate for high‐performance tunable device applications. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 15–18, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20709