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Direct noise characterization of microwave FET using 50Ω noise figure and Y ‐parameter measurements
Author(s) -
De Dominicis Marco,
Giannini Franco,
Limiti Ernesto,
Serino Antonio
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20698
Subject(s) - noise figure , microwave , noise (video) , electronic engineering , equivalent circuit , y factor , noise temperature , noise generator , electrical engineering , engineering , computer science , telecommunications , cmos , amplifier , voltage , artificial intelligence , image (mathematics)
A fast and accurate method to determine the noise parameters of microwave FETs, based on a new expression of the device noise figure as a function of the Y ‐parameters and two equivalent noise temperatures, is presented. The method requires only the measured small‐signal parameters and 50Ω noise figure, thus avoiding the extraction of the small‐signal equivalent circuit. It is particularly suitable for noise characterization of coplanar devices. Good agreement with the results of more conventional methods is demonstrated in a wide frequency range. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 565–569, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20698