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26‐GHz pHEMT VCO MMIC
Author(s) -
Wen Yu,
Xiaowei Sun,
Rong Qian,
Yimen Zhang
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20694
Subject(s) - monolithic microwave integrated circuit , voltage controlled oscillator , high electron mobility transistor , electrical engineering , microwave , chip , test fixture , fixture , engineering , biasing , voltage , transistor , materials science , electronic engineering , optoelectronics , telecommunications , amplifier , mechanical engineering , cmos
Abstract A wide tuning range and high‐output‐power 26‐GHz pHEMT voltage‐controlled oscillator (VCO) MMIC based on a 0.25‐μm GaAs pHEMT process is presented. The active‐biasing technique has been adopted to reduce the chip size and to increase the bandwidth of operation, and maximum negative resistance has been chosen in order to obtain high output power. The measured (with the chip in a test fixture) oscillating frequency is 25.7 ± 0.7 GHz and the output power is 11 ± 1 dBm (with test fixture loss considered). The fabricated VCO MMIC chip size is 1.5 × 1.0 mm. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 550–552, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20694