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An improved optically controlled phase shifter on Si wafer
Author(s) -
Li H. P.,
Chan Kam Tai
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20690
Subject(s) - phase shift module , wafer , materials science , signal (programming language) , microstrip , microwave , optoelectronics , substrate (aquarium) , phase (matter) , amplitude , optics , electrical engineering , telecommunications , engineering , insertion loss , physics , computer science , programming language , oceanography , quantum mechanics , geology
The transmission characteristics of an improved optically controlled microstrip interdigital gap structure on a high‐resistivity silicon substrate are reported. When irradiated with an optically controlled power as low as 8 mw, a maximum signal‐phase change of 37° is obtained while the signal amplitude remains nearly constant. The proposed device can potentially be used as an optically controlled phase shifter. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 540–541, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20690