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A technique to extract extrinsic parameters of HEMTs
Author(s) -
Jeon ManYoung
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20675
Subject(s) - capacitance , microwave , electrical engineering , optoelectronics , materials science , electronic engineering , engineering , physics , electrode , telecommunications , quantum mechanics
A practical technique for separating the drain‐pad capacitance from the merged capacitance of drain pad, gate‐to‐drain, and drain‐to‐source of a pinched‐off cold FET is presented. Moreover, unlike other methods requiring additional DC measurements, the presented technique allows us to extract extrinsic resistances using only RF measurements. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 489–492, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20675
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