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A Ku‐band four‐stage temperature compensated PHEMT MMIC power amplifier
Author(s) -
Huang C. W.,
Chang S. J.,
Wu W.,
Wu C. L.,
Chang C. S.
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20673
Subject(s) - monolithic microwave integrated circuit , resistor , high electron mobility transistor , electrical engineering , amplifier , microwave , materials science , power (physics) , atmospheric temperature range , optoelectronics , engineering , transistor , physics , telecommunications , cmos , voltage , quantum mechanics , meteorology
The successful development of a new four‐stage 1‐W AlGaAs/InGaAs/GaAs PHEMT MMIC with a temperature‐compensating GaAs feedback resistor is reported. It was found that we can significantly reduce the gain variation in the temperature range between −40 and 80°C from 7 dB to less than 3 dB by using the temperature‐compensating GaAs feedback resistor. It was also found that the use of the GaAs feedback resistor will neither result in a decrease in output power nor a decrease in the PAE of P sat for the temperature compensated power amplifier. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 480–485, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20673