A Ku‐band four‐stage temperature compensated PHEMT MMIC power amplifier | Zendy

Huang C. W. | Zendy; Chang S. J. | Zendy; Wu W. | Zendy; Wu C. L. | Zendy; Chang C. S. | Zendy

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A Ku‐band four‐stage temperature compensated PHEMT MMIC power amplifier

Author(s) -

Huang C. W.,

Chang S. J.,

Wu W.,

Wu C. L.,

Chang C. S.

Publication year - 2005

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.20673

Subject(s) - monolithic microwave integrated circuit , resistor , high electron mobility transistor , electrical engineering , amplifier , microwave , materials science , power (physics) , atmospheric temperature range , optoelectronics , engineering , transistor , physics , telecommunications , cmos , voltage , quantum mechanics , meteorology

The successful development of a new four‐stage 1‐W AlGaAs/InGaAs/GaAs PHEMT MMIC with a temperature‐compensating GaAs feedback resistor is reported. It was found that we can significantly reduce the gain variation in the temperature range between −40 and 80°C from 7 dB to less than 3 dB by using the temperature‐compensating GaAs feedback resistor. It was also found that the use of the GaAs feedback resistor will neither result in a decrease in output power nor a decrease in the PAE of P sat for the temperature compensated power amplifier. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 480–485, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20673

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