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Design of a Ku‐band Wilkinson power divider on surface‐stabilized high‐resistivity Si substrates
Author(s) -
Ji Taeksoo,
Yoon Hargsoon,
Abraham Jose K.,
Varadan Vijay K.
Publication year - 2005
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20659
Subject(s) - insertion loss , wilkinson power divider , materials science , optoelectronics , silicon , microwave , cmos , ku band , electrical engineering , power dividers and directional couplers , fabrication , engineering , frequency divider , telecommunications , medicine , alternative medicine , pathology
The design, fabrication, and experimental evaluation of a Ku‐Band 3‐dB Wilkinson power divider on high‐resistivity silicon (HRS) are presented in this paper. The measured insertion for the powder divider is 3.5 dB and the isolation between ports 2 and 3 is 12 dB. CPW lines were fabricated on two different silicon substrates (HRS and CMOS‐grade silicon) and it is shown that the loss characteristics for a 50Ω CPW patterned on the surface‐stabilized HRS is only 0.16 dB at 15 GHz. In contrast, the insertion loss for CPW line on CMOS grade silicon is 8.3 dB at 15 GHz. Thus, low insertion loss can be achieved by stabilizing the surface of HRS with a thin polysilicon layer. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 436–439, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20659