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Microstrip lateral RF MEMS switch integrated with multistep CPW transition
Author(s) -
Liu A. Q.,
Palei W.,
Tang M.,
Alphones A.
Publication year - 2004
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20557
Subject(s) - deep reactive ion etching , microelectromechanical systems , coplanar waveguide , microstrip , surface micromachining , silicon on insulator , materials science , insertion loss , optoelectronics , microwave , fabrication , etching (microfabrication) , monolithic microwave integrated circuit , conductor , electrical engineering , electronic engineering , silicon , reactive ion etching , engineering , telecommunications , nanotechnology , layer (electronics) , cmos , amplifier , medicine , alternative medicine , pathology , composite material
Abstract A new type of microstrip lateral metal‐contacting micro‐electromechanical systems (MEMS) series switch using an enhanced transition‐design technology is proposed and demonstrated. It uses a conductor‐backed coplanar waveguide (CBCPW) connected to a microstrip back‐to‐back MEMS transmission line without any via holes or bonded wires. The RF measurements of this switch show an off‐state isolation of 18 dB and an on‐state insertion loss of less than 2 dB at 6–27 GHz. In addition, the simplicity of this fabrication process is achieved using deep reactive‐ion etching (DRIE), micromachining technology, and silicon‐on‐insulator (SOI) substrate. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 93–95, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20557